Applications of silicon-germanium heterostructure devices by C.K Maiti, G.A Armstrong

By C.K Maiti, G.A Armstrong

The main major function of this paintings is that it combines 3 unique issues - expertise, equipment layout and simulation, and purposes - in a finished means.


This booklet is meant to be used by means of senior undergraduate or first-year graduate scholars in utilized Physics, digital and electric Engineering, and fabrics Sciences, and as a reference for engineers and scientists thinking about semiconductor gadget learn and improvement for RF functions.

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17 1043–8 Wang W I 1984 Molecular beam epitaxial growth and material properties of GaAs and AlGaAs on Si(100) Appl. Phys. Lett. 44 1149–51 Wright S L, Kroemer H and Inada M 1984 Molecular beam epitaxial growth of GaP on Si J. Appl. Phys. 55 2916–27 Matsushita T, Oh-Uchi N, Hayashi H and Yamoto H 1979 A silicon heterojunction transistor Appl. Phys. Lett. 35 549–50 Yablonovitch E and Gmitter T 1985 A study of n+ SIPOS:p-Si heterojunction emitters IEEE Electron Device Lett. 6 597–9 Kwark Y H and Swanson R M 1987 N-type SIPOS and polysilicon emitters Solid-State Electron.

27 1408–10 [40] Won T and Morkoc H 1989 High speed performance of Si/Si1−x Gex heterojunction bipolar transistors IEEE Electron Device Lett. 10 33–5 [41] Hueting R J E, Slotboom J W, Pruijmboom A, de Boer W B, Timmering E C and Cowern N E B 1996 On the optimization of SiGe-base bipolar transistors IEEE Trans. Electron Devices 43 1518–24 [42] Karlsteen M and Willander M 1990 Optimized frequency characteristics of Si/SiGe heterojunction and conventional bipolar transistors Solid-State Electron. 33 199–204 28 Introduction [43] Oda K, Ohue E, Tanabe M, Shimamoto H, Onai T and Washio K 1997 130 GHz fT SiGe HBT technology IEEE IEDM Tech.

OPTOELECTRONIC DEVICES The optoelectronics realm has traditionally been reserved to III–V and II–VI compound semiconductors, due to the availability of direct transitions and heterostructures. However, the introduction of SiGe allows heterostructures to be fabricated in traditional Si-only technologies, which expands the potential of Si optoelectronics. 10. 10. The integrated silicon chip of the future: CMOS, HBT/bipolar, SiGe quantum devices, SiGe detectors, SiGe waveguides and light emitter all on a chip.

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